Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm
M. K. BakhadirkhanovTashkent State Technical University, 100097, Tashkent, UzbekistanС. Б. ИсамовTashkent State Technical University, 100097, Tashkent, UzbekistanSh. N. IbodullaevTashkent State Technical University, 100097, Tashkent, UzbekistanS. KoveshnikovTashkent State Technical University, 100097, Tashkent, UzbekistanН. НоркуловNational University of Uzbekistan, 100174, Tashkent, Uzbekistan
ABI
Аннотация
It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn4B nanoclusters can be changed by varying the electric field in the range of 0.1–30 V/cm. It has been found that, by changing the electric field, one can shift the photoresponse threshold of the samples at T = 100 K from 4.6 to 8 μm. The monochromatic photosensitivity at hν = 0.4 eV increases by 2.5 orders of magnitude as the field changes from 1 to 3 V/cm.
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