Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
V. V. MamutinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. P. UlinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. Tret’yakovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,S. V. IvanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. G. KonnikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
ABI
Аннотация
It is shown that GaN layers can be grown on (100)-and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed ntype conductivity with a carrier concentration ∼1018. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses ∼2000 Å, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation.
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