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Иш: Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

1. Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

   F. Yu. Soldatenkov, V. P. Ulin, A. A. Yakovenko +3

   МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000035