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P. S. Kop’ev

17 та иш

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

  1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19981 иқтибос
    ABI

  2. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

    V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

    МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19991 иқтибос
    ABI

  3. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

    R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

    МақолаAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19930 иқтибос
    ABI

  4. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

    A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

    МақолаStrong Light-Matter InteractionsTechnical Physics Letters19970 иқтибос
    ABI

  5. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

    I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос
    ABI

  6. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19970 иқтибос
    ABI

  7. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос
    ABI

  8. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  9. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  10. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

    A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  11. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  12. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

    V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

    МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос
    ABI

  13. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  14. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    МақолаLaser-Matter Interactions and ApplicationsMaterials science forum19980 иқтибос
    ABI

  15. Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

    L. Ya. Karachinskiĭ, A. M. Georgievskii, N. A. Pikhtin +3

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 иқтибос
    ABI

  16. Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition

    M. V. Muzafarova, Ivan V. Ilyin, E. N. Mokhov +7

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
    ABI

  17. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

    Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 иқтибос
    ABI