S. V. Ivanov

3 та иш

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19991 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.522142

2. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

   V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

   МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000162

3. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   МақолаGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.001077