Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

Results are presented of studies of the photoluminescence properties of epitaxial layers of AlxGa1−x As solid solutions grown by liquid-phase epitaxy with nonequilibrium crystallization achieved by ultrafast rates of cooling of the flux (V∼102–103 °C/s). The photoluminescence characteristics obtained indicate that the epitaxial layers are of high quality. It is also observed that when samples with x buff=0.5–0.55 are exposed to laser radiation of power density ∼1 kW/cm2 at a temperature of 77 K, the spectral composition of the radiation undergoes irreversible changes caused by the formation of an arsenic vacancy (V As)-donor impurity complex.

Ҳали таржима қилинмаган