S. I. Kokhanovskiǐ

2 та иш

Ioffe Physicotechnical Institute, Academy of Sciences of the U.S.S.R., Leningrad, 194021, U.S.S.R

1. On the possibility of a flare-up of discrete exciton absorption structure in n-CdxHg1−xTe crystals in a magnetic field

   V. I. Ivanov-Omskiĭ, S. I. Kokhanovskiǐ, R. P. Seysyan +4

   МақолаSemiconductor Quantum Structures and DevicesSolid State Communications19830 иқтибос

   ABIABI:AkademIndex/openalex/1983.article.000026

2. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

   А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000239