Ушбу иш иқтибос қилган ишлар

2 та иш

Иш: Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

1. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

   N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

   Мақола20004 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.396897

2. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.396896