Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
N.S. SavkinaA.F. Ioffe Physico-Technical Institute, St. Petersburg, RussiaA. А. LebedevA.F. Ioffe Physico-Technical Institute, St. Petersburg, RussiaD. V. DavydovA.F. Ioffe Physico-Technical Institute, St. Petersburg, RussiaAnatoly M. Strel’chukA.F. Ioffe Physico-Technical Institute, St. Petersburg, RussiaA. S. TregubovaA.F. Ioffe Physico-Technical Institute, St. Petersburg, RussiaChristophe RaynaudCEGELY UPRESA CNRS no. 5005, INSA de Lyon, Bât. 401, 20 Avenue A. Einstein, 69621 Villeurbanne Cedex, FranceJ.P. ChanteCEGELY UPRESA CNRS no. 5005, INSA de Lyon, Bât. 401, 20 Avenue A. Einstein, 69621 Villeurbanne Cedex, FranceM.L. LocatelliCEGELY UPRESA CNRS no. 5005, INSA de Lyon, Bât. 401, 20 Avenue A. Einstein, 69621 Villeurbanne Cedex, FranceDominique PlansonCEGELY UPRESA CNRS no. 5005, INSA de Lyon, Bât. 401, 20 Avenue A. Einstein, 69621 Villeurbanne Cedex, FranceJ. MilanInstitut de Ciència de Materials (CSIC), Campus UAB, 08193 Bellaterra, SpainPhilippe GodignonInstitut de Ciència de Materials (CSIC), Campus UAB, 08193 Bellaterra, SpainFrancisco José CamposDepartament de Fı́sica, Universitat Autònoma de Barcelona, 08193 Bellaterra, SpainN. MestresInstitut de Ciència de Materials (CSIC), Campus UAB, 08193 Bellaterra, SpainJ. PascualDepartament de Fı́sica, Universitat Autònoma de Barcelona, 08193 Bellaterra, SpainGheorghe BrezeanuUP Bucharest, RomaniaM. BădilăIMT Bucharest, Romania
2000en
ABI
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