Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000117

2. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

   Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000056

3. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

   Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000282

4. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

   A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000211