Recombination Processes in 4H-SiC pn Structures

Commercial 4H-SiC p + n structures with an uncompensated donor concentration (N d -N a ) of ~1.5∙10 15 cm -3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

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