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K. Sivasankaran

6 та иш

Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology, Vellore, 632014, Tamil Nadu, India

  1. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesMicro and Nanostructures20235 иқтибос
    ABI

  2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 иқтибос
    ABI

  3. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    МақолаSemiconductor materials and devices20241 иқтибос
    ABI

  4. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    МақолаAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 иқтибос
    ABI

  5. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesJournal of Computational Electronics20250 иқтибос
    ABI

  6. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 иқтибос
    ABI