Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions
I. G. AtabaevDepartment of Electrical and Computer Engineering, Michigan State University, East Lansing, USAN. A. MatchanovDepartment of Electrical and Computer Engineering, Michigan State University, East Lansing, USAM. U. KhazhievDepartment of Electrical and Computer Engineering, Michigan State University, East Lansing, USASh. A. YusupovaDepartment of Electrical and Computer Engineering, Michigan State University, East Lansing, USA
ABI
Аннотация
Single-crystalline Si1 − x Ge x ingots with a germanium content of up to 35 at. %, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium and a low density of dislocations. The material was characterized with respect to the structure and electrical properties. The resistivity and the carrier lifetime, mobility, and concentration in Si1 − x Ge x single crystals have been studied as functions of the germanium content.
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