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A. G. Gulyamov

22 та иш

Physical-Technical Institute, Uzbek Academy of Sciences, Chingiz Aytmatov Street, 2 “B”, Tashkent 100084, Uzbekistan

  1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 иқтибос
    ABI

  2. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    МақолаOptical Polarization and EllipsometrySemiconductors201510 иқтибос
    ABI

  3. Influence of temperature on the oscillations of longitudinal magnetoresistance in semiconductors with a nonparabolic dispersion law

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    МақолаQuantum and electron transport phenomenaIndian Journal of Physics20189 иқтибос
    ABI

  4. On the Heat Capacity of a Quasi-Two-Dimensional Electron Gas

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov

    МақолаQuantum and electron transport phenomenaAdvances in Condensed Matter Physics20198 иқтибос
    ABI

  5. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    МақолаMechanical and Optical ResonatorsSemiconductors20197 иқтибос
    ABI

  6. Features of the chemical potential of a quasi-two-dimensional electron gas at low-temperatures

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov +2

    МақолаQuantum and electron transport phenomenaInternational Journal of Modern Physics B20216 иқтибос
    ABI

  7. Influence of Pressure on the Temperature Dependence of Quantum Oscillation Phenomena in Semiconductors

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20176 иқтибос
    ABI

  8. TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD

    M. Ahmetoğlu, Gönül Kaynak, S. H. Shamirzaev +5

    МақолаSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B20095 иқтибос
    ABI

  9. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20095 иқтибос
    ABI

  10. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаElectromagnetic Effects on MaterialsSemiconductors20115 иқтибос
    ABI

  11. Broadening Thermal Energy Levels and Density States Quasi One-Dimensional Electron Gas

    P. J. Baymatov, A. G. Gulyamov, A. B. Davlatov +1

    МақолаQuantum and electron transport phenomenaJournal of Applied Mathematics and Physics20163 иқтибос
    ABI

  12. Formation of intermediate coupling optical polarons and bipolarons in two-dimensional systems

    S. Dzhumanov, P.J. Baimatov, Sh. T. Inoyatov +2

    МақолаPhysics of Superconductivity and MagnetismPhysics Letters A20192 иқтибос
    ABI

  13. Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    МақолаSolid-state spectroscopy and crystallographyAdvances in Condensed Matter Physics20192 иқтибос
    ABI

  14. Eddy currents in the p–n junction in a microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    МақолаSurface and Thin Film PhenomenaSemiconductors20092 иқтибос
    ABI

  15. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    МақолаSemiconductor materials and interfacesApplied Solar Energy20182 иқтибос
    ABI

  16. System of Potential Barriers in Nanostructures

    A. G. Gulyamov

    МақолаGraphene research and applicationsWorld Journal of Condensed Matter Physics20152 иқтибос
    ABI

  17. The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

    G. Gulyamov, A. G. Gulyamov, A. Q. Ergashev +1

    МақолаSilicon and Solar Cell TechnologiesJournal of Modern Physics20151 иқтибос
    ABI

  18. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    МақолаSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 иқтибос
    ABI

  19. Investigation of influence of high temperature and low magnetic fields on oscillations of the magnetic susceptibility in semiconductors

    G. Gulyamov, A. G. Gulyamov, Ulugbek Inayatillayevich Erkaboev

    МақолаElectric Power Systems and ControlUzbekiston Fizika Zhurnali20150 иқтибос
    ABI

  20. Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films

    G. Gulyamov, A. G. Gulyamov, Feruza R. Muhitdinova

    Мақолаnanoparticles nucleation surface interactionsJournal of Modern Physics20160 иқтибос
    ABI

  21. MATHEMATICAL MODELING OF TEMPERATURE EFFECT ON THE FAN CHART OF MAGNETOABSORPTION SPECTRUM IN SEMICONDUCTORS

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    МақолаSemiconductor Quantum Structures and DevicesAlternative Energy and Ecology (ISJAEE)20190 иқтибос
    ABI

  22. Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

    M. U. Khazhiev, R. R. Kabulov, A. G. Gulyamov +2

    МақолаZnO doping and propertiesApplied Solar Energy20210 иқтибос
    ABI