T.A. Atamuratov

1 та иш

Urgench State University,Physics department,Urgench,Uzbekistan

1. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS₂ based MOSFET

   A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

   МақолаGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.511884