E. K. Kalandarov

2 та иш

Institute of Applied Physics Research, National University of Uzbekistan, Tashkent, Uzbekistan

1. Features of the behavior of lanthanum and hafnium atoms in silicon

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000051

2. Influence of thermal treatment on characteristics of silicon doped by lanthanium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000426