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M. Kаrimov

27 та иш

Institute of Nuclear Physics

  1. Formation of radiation defects in zinc-doped silicon solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +5

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20134 иқтибос
    ABI

  2. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 иқтибос
    ABI

  3. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 иқтибос
    ABI

  4. Influence of the conductivity type of silicon on the process of radiation degradation of solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +4

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20132 иқтибос
    ABI

  5. Semiconductor Storage Dosimeter Based on Neutron-Doped Silicon

    Marat S. Yunusov, M. Kаrimov, M. Khakimov

    МақолаRadiation Effects in ElectronicsAtomic Energy20012 иқтибос
    ABI

  6. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

    МақолаAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20091 иқтибос
    ABI

  7. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    МақолаSilicon Nanostructures and PhotoluminescenceRussian Physics Journal20101 иқтибос
    ABI

  8. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

    Marat S. Yunusov, M. Kаrimov, P. A. Khalikov

    МақолаSemiconductor materials and interfacesTechnical Physics Letters19991 иқтибос
    ABI

  9. On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>

    Sh. Makhkamov, M. Kаrimov, A. O. Kurbanov +2

    МақолаSilicon and Solar Cell TechnologiesRussian Physics Journal20051 иқтибос
    ABI

  10. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20101 иқтибос
    ABI

  11. About mechanism of radiation stability in compensated silicon

    Yunusov, M. Kаrimov, Zhalelov

    МақолаGraphite, nuclear technology, radiation studies19970 иқтибос
    ABI

  12. Carrier-removal rates under the action of gamma radiation in n-type compensated silicon

    Yunusov, M. Kаrimov, Zhalelov

    МақолаSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali19970 иқтибос
    ABI

  13. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    МақолаSemiconductor materials and interfacesSemiconductors19980 иқтибос
    ABI

  14. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

    M. Kаrimov, A. K. Karakhodzhaev

    МақолаSemiconductor materials and interfacesRussian Physics Journal20010 иқтибос
    ABI

  15. On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta

    Marat S. Yunusov, M. Kаrimov, M. A. Dzhalelov

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20010 иқтибос
    ABI

  16. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

    N.J. Odilova, M. Kаrimov, K. A. Begmatov +2

    МақолаSilicon and Solar Cell Technologies20030 иқтибос
    ABI

  17. Carrier removal rates in compensated silicon at γ-radiation

    M. Kаrimov, Sh. Mahkamov, Zhalelov

    МақолаSilicon and Solar Cell Technologies20030 иқтибос
    ABI

  18. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    МақолаSilicon and Solar Cell TechnologiesRussian Physics Journal20060 иқтибос
    ABI

  19. Influence of γ- radiation on the recombination properties of P-type nickel doped silicon

    A. O. Kurbanov, M. Kаrimov

    МақолаSilicon and Solar Cell Technologies20060 иқтибос
    ABI

  20. Study of influence of γ-quanta 60 Co on recombination properties of Si and Si

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +2

    МақолаSemiconductor materials and interfaces20070 иқтибос
    ABI

  21. Electrophysical properties of under-doped cuprates at internal effects

    M. Kаrimov, Sh. A. Makhmudov, Z.S. Khudajbergenov +1

    МақолаMetallurgical Processes and Thermodynamics20070 иқтибос
    ABI

  22. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20080 иқтибос
    ABI

  23. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +2

    МақолаAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20110 иқтибос
    ABI

  24. Fast neutron influence on properties of neutron-doped silicon with copper impurity

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +4

    МақолаSilicon and Solar Cell Technologies20120 иқтибос
    ABI

  25. Thermoresistor based on neutron compensated silicon

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +3

    МақолаAdvanced MEMS and NEMS Technologies20120 иқтибос
    ABI