M. N. Alkulov

1 та иш

Institute of Nuclear Physics , Ulugbek, Tashkent, 702132, Uzbekistan

1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

   Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

   МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279519