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N.A. Tursunov

24 та иш

Institute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, Uzbekistan

  1. Formation of radiation defects in zinc-doped silicon solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +5

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20134 иқтибос
    ABI

  2. Radiation-induced formation of ZnO nanoparticles on the ZnSe single-crystal surface

    D. B. Él’murotova, Э. М. Ибрагимова, M. U. Kalanov +1

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20093 иқтибос
    ABI

  3. Influence of the conductivity type of silicon on the process of radiation degradation of solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +4

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20132 иқтибос
    ABI

  4. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

    МақолаAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20091 иқтибос
    ABI

  5. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    МақолаSilicon Nanostructures and PhotoluminescenceRussian Physics Journal20101 иқтибос
    ABI

  6. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20101 иқтибос
    ABI

  7. The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov

    МақолаSemiconductor Quantum Structures and Devices19950 иқтибос
    ABI

  8. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаGraphite, nuclear technology, radiation studies19950 иқтибос
    ABI

  9. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    МақолаSilicon and Solar Cell Technologies19970 иқтибос
    ABI

  10. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаSilicon and Solar Cell Technologies19970 иқтибос
    ABI

  11. The influence of technological regimes of the silicon solar cells production on the formation of radiation effects

    M. Ashurov, Sh. Makhkamov, S.V. Martnchenko +2

    МақолаEnvironmental Sustainability and Technology19970 иқтибос
    ABI

  12. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

    M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

    МақолаSemiconductor materials and interfacesMRS Proceedings19980 иқтибос
    ABI

  13. Characteristics of the formation of radiation defects in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаGraphite, nuclear technology, radiation studiesTechnical Physics19990 иқтибос
    ABI

  14. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    МақолаSemiconductor materials and interfaces19990 иқтибос
    ABI

  15. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    МақолаSilicon and Solar Cell Technologies19990 иқтибос
    ABI

  16. Formation of radiation defects in silicon structures under low-intensity electron irradiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаSemiconductor materials and interfacesSemiconductor Science and Technology20010 иқтибос
    ABI

  17. Peculiarities of silicon structures doped by neutron-transmutation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаElectric Power Systems and Control20020 иқтибос
    ABI

  18. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    МақолаSilicon and Solar Cell Technologies20040 иқтибос
    ABI

  19. Study of influence of γ-quanta 60 Co on recombination properties of Si and Si

    M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +2

    МақолаSemiconductor materials and interfaces20070 иқтибос
    ABI

  20. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20080 иқтибос
    ABI

  21. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +2

    МақолаAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20110 иқтибос
    ABI

  22. Fast neutron influence on properties of neutron-doped silicon with copper impurity

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +4

    МақолаSilicon and Solar Cell Technologies20120 иқтибос
    ABI

  23. Thermoresistor based on neutron compensated silicon

    Sh. Makhkamov, M. Kаrimov, N.A. Tursunov +3

    МақолаAdvanced MEMS and NEMS Technologies20120 иқтибос
    ABI

  24. Formation of Copper Impurity-Defect Complexes and Their Impact on Electrical Properties of Silicon

    M. Kаrimov, Sh. Machkamov, N.A. Tursunov +4

    МақолаSilicon and Solar Cell TechnologiesRussian Physics Journal20140 иқтибос
    ABI