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M. Ashurov

20 та иш

AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

  1. The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov

    МақолаSemiconductor Quantum Structures and Devices19950 иқтибос
    ABI

  2. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаGraphite, nuclear technology, radiation studies19950 иқтибос
    ABI

  3. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    МақолаSilicon and Solar Cell Technologies19970 иқтибос
    ABI

  4. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаSilicon and Solar Cell Technologies19970 иқтибос
    ABI

  5. The influence of technological regimes of the silicon solar cells production on the formation of radiation effects

    M. Ashurov, Sh. Makhkamov, S.V. Martnchenko +2

    МақолаEnvironmental Sustainability and Technology19970 иқтибос
    ABI

  6. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

    M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

    МақолаSemiconductor materials and interfacesMRS Proceedings19980 иқтибос
    ABI

  7. Characteristics of the formation of radiation defects in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаGraphite, nuclear technology, radiation studiesTechnical Physics19990 иқтибос
    ABI

  8. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    МақолаSemiconductor materials and interfaces19990 иқтибос
    ABI

  9. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    МақолаSilicon and Solar Cell Technologies19990 иқтибос
    ABI

  10. Formation of radiation defects in silicon structures under low-intensity electron irradiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаSemiconductor materials and interfacesSemiconductor Science and Technology20010 иқтибос
    ABI

  11. Peculiarities of silicon structures doped by neutron-transmutation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    МақолаElectric Power Systems and Control20020 иқтибос
    ABI

  12. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    МақолаSilicon and Solar Cell Technologies20040 иқтибос
    ABI

  13. Investigations of radiation induced transient absorption and emission in the quartz-polymer optical fiber

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +5

    МақолаGlass properties and applications20060 иқтибос
    ABI

  14. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20080 иқтибос
    ABI

  15. Influence of γ-Radiation Dose Growth and Dose Rates on Luminescence Properties of Pure Silica Core Fibers with High-OH Group Content

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +3

    МақолаGlass properties and applicationsJapanese Journal of Applied Physics20110 иқтибос
    ABI

  16. Thermovoltaic properties of microgranular silicon

    B. M. Abdurahmanov, M. M. Adilov, M. Ashurov +2

    МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20110 иқтибос
    ABI

  17. Influence of γ-Radiation Dose Growth and Dose Rates on Luminescence Properties of Pure Silica Core Fibers with High-OH Group Content

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +3

    МақолаLuminescence Properties of Advanced MaterialsJapanese Journal of Applied Physics20110 иқтибос
    ABI

  18. Dose and Dose Rate Dependency of Radiationinduced Transient Absorption in Pure Silica Optical Fibers Under Gamma Irradiation

    Maksudbek Baydjanov, M. Ashurov, И. Нуритдинов +2

    МақолаGlass properties and applications20170 иқтибос
    ABI

  19. Features of Radiation Physics of Topological Insulators

    B. L. Oksengendler, С. Е. Максимов, S. H. Suleymanov +7

    МақолаTopological Materials and PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос
    ABI

  20. An electronic approach to understanding the kinetics of hydrogen peroxide formation

    M. Ashurov, Б. Л. Оксенгендлер, N. N. Turaeva

    МақолаPhotoreceptor and optogenetics researchChemical Physics20250 иқтибос
    ABI