Thermovoltaic properties of microgranular silicon
B. M. AbdurahmanovArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanM. M. AdilovArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanM. AshurovArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanХ. Б. АшуровArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanБ. Л. ОксенгендлерArifov Institute of Electronics, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Temperature dependences of dark U xx and J sc are presented obtained on specimens of junctionless and unijunction converters of thermal energy produced from microgranular silicon both of high commercial quality and with impurities facilitating deep energy levels. It is demonstrated that decrease in the grain sizes, as well as addition of deep impurity, is accompanied by an increase in energy properties.
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