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K. A. Begmatov

7 та иш

Institute of Nuclear Physics , Ulugbek, Tashkent, 702132, Uzbekistan

  1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 иқтибос
    ABI

  2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 иқтибос
    ABI

  3. On several regularities of deep levels of d-impurities in silicon

    Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19952 иқтибос
    ABI

  4. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

    M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +4

    МақолаAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20091 иқтибос
    ABI

  5. Semiconductor detector as ionising radiation dosimeter

    Marat S. Yunusov, A. Akhmadaliev, K. A. Begmatov

    МақолаRadiation Detection and Scintillator TechnologiesRadiation Physics and Chemistry19951 иқтибос
    ABI

  6. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

    N.J. Odilova, M. Kаrimov, K. A. Begmatov +2

    МақолаSilicon and Solar Cell Technologies20030 иқтибос
    ABI

  7. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    МақолаSilicon and Solar Cell Technologies20040 иқтибос
    ABI