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А.С. Ачилов

7 works

Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2B, Tashkent, 700084, Uzbekistan

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 citations
    ABI

  2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    ArticleChalcogenide Semiconductor Thin FilmsModern Physics Letters B20234 citations
    ABI

  3. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 citations
    ABI

  4. Gamma irradiation effect on nCdS/pCd heterostructure

    S. A. Muzafarova, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and Materials20080 citations
    ABI

  5. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics

    Ш. А. Мирсагатов, Baiev, B. N. Zaveryukhin +1

    ArticleAdvanced Semiconductor Detectors and Materials20100 citations
    ABI

  6. Research of the real structure of the diode with barrier Schottky Al-pCdTe

    Ш. А. Мирсагатов, S. A. Muzafarova, Baiev +1

    ArticleAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20100 citations
    ABI

  7. The photosensitive structure CdTe/TeO 2 /CdO on the basis of CdTe film and thin oxide layer CdO synthesized by a magnetron-ionic dispersion method

    S. A. Muzafarova, Ш. А. Мирсагатов, Makhmudov +1

    ArticleChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20110 citations
    ABI