Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves
B. N. ZaveryukhinPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanN. N. ZaveryukhinaPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanOybek TursunkulovPhysical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The effect of ultrasonic waves on the spectral coefficient of radiation reflection from the surface of semiconductors used in solar energy converters is considered. A change in the reflectance of semiconductors before and after ultrasonic treatment is determined. It is shown that acoustic stimulation of the semiconductor surface and subsurface layers determines the radiation reflection conditions.
Темы
Идентификаторы
Цитирования и источники
Показатели — AkademScholar · Скоро