Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
С. И. ВласовKarakalpak State University, Nukus, Uzbekistan
ABI
Аннотация
We studied the effect of uniform compression on characteristics of Au-n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers.
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Цитирования и источники
Показатели — AkademScholar · Скоро