Article

Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

С. И. ВласовKarakalpak State University, Nukus, Uzbekistan

Semiconductor Physics Quantum Electronics & Optoelectronicsjournal2010en

ABI

Abstract

We studied the effect of uniform compression on characteristics of Au-n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers.

Topics

Advanced Materials and Semiconductor Technologies Advanced Energy Technologies and Civil Engineering Innovations Electrical and Thermal Properties of Materials

Identifiers

DOI: 10.15407/spqeo13.04.363

Citations and references

Cited by 2 3 references

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