Работы, цитирующие эту работу

Работ: 2

Работа: Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

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   Kanatbay A. Ismailov, Zlikha M. Saparniyazova, Gulchekhra T. Kudeshova +2

   СтатьяMaterial Properties and ApplicationsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.589127

2. Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal

   T. Z. Nasirov, Akmal Turayev, M.A. Muydinova +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.012035