Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

1. Influence of Doping Conditions on the Properties of Nickel Atom Clusters

   Kanatbay A. Ismailov, Zlikha M. Saparniyazova, Gulchekhra T. Kudeshova +2

   МақолаMaterial Properties and ApplicationsEast European Journal of Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.589127

2. Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal

   T. Z. Nasirov, Akmal Turayev, M.A. Muydinova +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.012035