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Electrical and Thermal Properties of Materials

Работ: 20

  1. High‐temperature anomalies in resistivity and thermoelectric power of thick‐film resistors and their conduction mechanism

    G. Abdurakhmanov, N. G. Abdurakhmanova

    СтатьяElectrical and Thermal Properties of Materialsphysica status solidi (a)2005Цитирований: 7
    ABI

  2. A new method for drying and calcining welding electrodes using emitters made of functional ceramic

    Rustam Saidov, R.KH. RAKHIMOV, Bekzod Yusupov +1

    СтатьяMaterial Properties and ApplicationsComputational nanotechnology2020Цитирований: 6
    ABI

  3. On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

    G. Abdurakhmanov

    СтатьяElectrical and Thermal Properties of MaterialsWorld Journal of Condensed Matter Physics2014Цитирований: 5
    ABI

  4. On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)

    G. Abdurakhmanov

    СтатьяElectrical and Thermal Properties of MaterialsWorld Journal of Condensed Matter Physics2011Цитирований: 4
    ABI

  5. Pseudogap, Nanocrystals and Electrical Conductivity of Doped Silicate Glass

    G. Abdurakhmanov, V. I. Shimanski, Б. Л. Оксенгендлер +2

    СтатьяElectrical and Thermal Properties of MaterialsTechnical Physics2021Цитирований: 3
    ABI

  6. Interaction of RuO<sub>2</sub> and Lead-Silicate Glass in Thick-Film Resistors

    G. Abdurakhmanov, G. S. Vakhidova, Lutfullo X. Tursunov

    СтатьяElectrical and Thermal Properties of MaterialsWorld Journal of Condensed Matter Physics2011Цитирований: 3
    ABI

  7. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

    С. И. Власов

    СтатьяAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics2010Цитирований: 2
    ABI

  8. Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

    Bahodir Kuchkarov, О. О. Маматкаримов, A. A. Abdulkhayev

    СтатьяGlass properties and applicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 1
    ABI

  9. Impact of Ruthenium Diffusion on the Electrical Properties of Thick Film Resistors

    Avazbek T. Dekhkonov, G. Abdurakhmanov, Mukhriddin E. Tursunov +5

    СтатьяElectrical and Thermal Properties of MaterialsEast European Journal of Physics2025Цитирований: 1
    ABI

  10. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    СтатьяSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
    ABI

  11. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    ГлаваSemiconductor materials and interfaces2008Цитирований: 0
    ABI

  12. Effect of Glass Composition on the Thermal Expansion of Relict Crystals of RuO<sub>2</sub> in Doped Lead-Silicate Glasses (Thick Film Resistors)

    G. Abdurakhmanov

    СтатьяElectrical and Thermal Properties of MaterialsJournal of Modern Physics2011Цитирований: 0
    ABI

  13. Ba0.98Bi0.02（Ti0.9Zr0.1）1-xCuxO3陶瓷的介电弛豫特征

    王久石, 丁士华, 宋天秀 +2

    СтатьяSemiconductor materials and interfaces硅酸盐学报2011Цитирований: 0
    ABI

  14. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

    П. Б. Парчинский, Л. Г. Лигай, Aslan Nasirov +2

    СтатьяGlass properties and applicationsSurface Engineering and Applied Electrochemistry2012Цитирований: 0
    ABI

  15. Effect of Ba+-Ion Implantation on the Composition and Electronic Structure of Silicate Glasses

    Д. А. Ташмухамедова, A. N. Urokov, G. Abdurakhmanov +1

    СтатьяGlass properties and applicationsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0
    ABI

  16. USE OF RESISTORS MADE WITH THICK-LAYER TECHNOLOGY, THOSE NOT SENSITIVE TO LOW TEMPERATURES IN LOAD CELLS

    Mukhriddin E. Tursunov, A. T. Dekhkonov, Jamshid Sharipov

    СтатьяElectrical and Thermal Properties of MaterialsJournal of science and innovative development2023Цитирований: 0
    ABI

  17. Influence of Implantation of Ions Ba<sup>+</sup> on the Composition and Electronic Structure of Silicate Glasses

    Д. А. Ташмухамедова, A. N. Urokov, G. Abdurakhmanov +1

    СтатьяGlass properties and applicationsПоверхность Рентгеновские синхротронные и нейтронные исследования2023Цитирований: 0
    ABI

  18. The Two and Three Electrodes Systems Topology Optimization of Electrochemical Sensors

    Ulugmurodov Elshod Abdusalim ugli

    СтатьяElectrical and Thermal Properties of MaterialsTexas Journal of Engineering and Technology2024Цитирований: 0
    ABI

  19. Intrinsic Electrical Conductivity of Silicate Glass Doped with Ruthenium Dioxide: Experimental Evidence

    G. Abdurakhmanov, Avazbek T. Dekhkonov, Mukhriddin E. Tursunov

    СтатьяElectrical and Thermal Properties of Materialsphysica status solidi (b)2025Цитирований: 0
    ABI

  20. Next-Generation Sensor Networks for Material Moisture Measurement: Wired and Cordless Solutions

    Palvan Kalandarov, Rashid Nasimov

    СтатьяSensor Technology and Measurement Systems2025Цитирований: 0
    ABI