Influence of Implantation of Ions Ba<sup>+</sup> on the Composition and Electronic Structure of Silicate Glasses
Аннотация
In this work, using the methods of Auger electron spectroscopy, ultraviolet photoelectron spectroscopy and light absorption spectroscopy, the influence of the implantation of Ba+ ions into silicate glass and subsequent annealing on the composition, density of electronic states and parameters of energy bands was investigated. It has been shown that nonstoichiometric oxides Si, Pb, and Ba, as well as unbound atoms of the same elements, are formed in the ion-implanted layer after ion implantation. As a result, there is a significant change in the electronic structure of silicate glass, in particular, the band gap decreases by ∼2 eV. After annealing at T = 1000 K, unbound Si, Pb, and Ba atoms disappear in the ion-implanted layer (within the sensitivity of the Auger electron spectrometer) and stoichiometric oxides such as SiO2, PbO, and BaO are formed.