Статья

Vibrations of photocurrent induced by IR light in silicon with quantum dots

E.U. ArzikulovNavoi Samarkand State University, University bul. 15, Samarkand, 140104, Republic of UzbekistanИ. П. ПарманкуловNavoi Samarkand State University, University bul. 15, Samarkand, 140104, Republic of Uzbekistan

Surface Engineering and Applied Electrochemistryjournal2008en

ABI

Аннотация

Experimental results related to the research of photocurrent vibrations induced by IR light in silicon with quantum dots are presented. It is shown that the large amplitude of the vibrations (up to 1 A) and the depth of the modulation (∼100%) observed in the experiment cannot be explained in the framework of the S.G. Kalashnikov Theory. To explain the observed photocurrent vibrations, the self-organized quantum dots, which possess anomalously large asymmetric capture cross sections for charge carriers, are used.

Темы

Silicon Nanostructures and Photoluminescence Thermography and Photoacoustic Techniques Semiconductor materials and interfaces

Идентификаторы

DOI: 10.3103/s1068375508060148

Цитирования и источники

Цитирований: 2 Использованных источников: 1

Показатели — AkademScholar · Скоро