Interaction of radiation defects with nickel atom clusters in silicon
Х. М. ИлиевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Republic of UzbekistanZ.M. SaparniyazovaTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Republic of UzbekistanК. А. ИсмайловTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Republic of UzbekistanО. Э. СаттаровTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Republic of UzbekistanС. НигмонхаджаевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Republic of Uzbekistan
ABI
Аннотация
Based on infrared microscopic studies, we show that clusters of impurity nickel atoms are uniformly distributed over the entire volume of the silicon crystal; by varying the density of the clusters in silicon exposed to γ-radiation, it is possible to control the concentration of the electroactive atoms and the structure of the nickel clusters. It is shown that the presence of clusters in the lattice significantly increases the radiation resistance of the silicon.
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