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О. Э. Саттаров

Работ: 11

Tashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan

  1. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    СтатьяInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry2010Цитирований: 10
    ABI

  2. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    СтатьяMagnetic Properties and ApplicationsSemiconductors2014Цитирований: 7
    ABI

  3. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    СтатьяSemiconductor materials and interfacesInorganic Materials2012Цитирований: 5
    ABI

  4. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    СтатьяGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry2011Цитирований: 5
    ABI

  5. Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

    М. К. Бахадырханов, О. Э. Саттаров, Х. М. Илиев +2

    СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 0
    ABI

  6. About nanoclusters nature of manganese atoms in silicon

    Г. Х. Мавлонов, С. Б. Исамов, Z.M. Saparniyazova +3

    СтатьяLaser-Ablation Synthesis of Nanoparticles2010Цитирований: 0
    ABI

  7. The γ radiation effect on silicon properties with nanoclusters of manganese atoms

    K.A. Ismaylov, Х. М. Илиев, Z.M. Saparniyazova +2

    СтатьяCrystallography and Radiation Phenomena2010Цитирований: 0
    ABI

  8. The possibility of multistage structures formation on the base of silicon with nickel atoms clusters

    Х. М. Илиев, Z.M. Saparniyazova, О. Э. Саттаров +2

    СтатьяMaterial Properties and Applications2011Цитирований: 0
    ABI

  9. Thermodynamic conditions of formation of nickel atom clusters in the silicon lattice

    Б. А. Абдурахманов, Х. М. Илиев, Z.M. Saparniyazova +1

    СтатьяAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali2011Цитирований: 0
    ABI

  10. Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

    M. K. Khakkulov, A. Sh. Mavlyanov, О. Э. Саттаров +2

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2024Цитирований: 0
    ABI

  11. Mathematical modeling based on astronomical and physical-geometric principles for optimizing the efficiency of solar panels

    Dostonjon Yakubov, О. Э. Саттаров, Б. А. Абдурахманов +2

    СтатьяSolar Radiation and Photovoltaics2025Цитирований: 0
    ABI