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Н. Ф. Зикриллаев

Работ: 42

Tashkent State Technical University, Tashkent, 100097, Uzbekistan

  1. Silicon photovoltaic cells with clusters of nickel atoms

    М. К. Бахадырханов, S. A. Valiev, Н. Ф. Зикриллаев +3

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2016Цитирований: 35
    ABI

  2. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    СтатьяQuantum and electron transport phenomenaJournal of the Korean Physical Society2014Цитирований: 11
    ABI

  3. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSemiconductor materials and interfacesSemiconductors2021Цитирований: 8
    ABI

  4. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    СтатьяSemiconductor materials and interfacesSemiconductors2022Цитирований: 8
    ABI

  5. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 8
    ABI

  6. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2020Цитирований: 8
    ABI

  7. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry2013Цитирований: 6
    ABI

  8. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2014Цитирований: 6
    ABI

  9. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics2012Цитирований: 6
    ABI

  10. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    СтатьяMagnetic properties of thin filmsJournal of Nano- and Electronic Physics2023Цитирований: 5
    ABI

  11. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5
    ABI

  12. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2023Цитирований: 5
    ABI

  13. Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяOptical and Acousto-Optic TechnologiesApplied Solar Energy2012Цитирований: 5
    ABI

  14. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 4
    ABI

  15. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    СтатьяSemiconductor materials and interfacesSemiconductors1999Цитирований: 4
    ABI

  16. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    СтатьяSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry2024Цитирований: 3
    ABI

  17. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2
    ABI

  18. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 2
    ABI

  19. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 2
    ABI

  20. Spectral range of current self-oscillation in manganese-doped silicon

    M. K. Bakhadirkhanov, Н. Ф. Зикриллаев, K. S. Ayupov +3

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics2006Цитирований: 2
    ABI

  21. An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, Sh. N. Ibodullaev, Н. Ф. Зикриллаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2021Цитирований: 2
    ABI

  22. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    СтатьяChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry2007Цитирований: 1
    ABI

  23. Negative magnetoresistance in silicon doped with manganese

    Н. Ф. Зикриллаев, Х. М. Илиев, Г. Х. Мавлонов +2

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 1
    ABI

  24. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1
    ABI

  25. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 1
    ABI