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Н. Ф. Зикриллаев

42 works

Tashkent State Technical University, Tashkent, 100097, Uzbekistan

  1. Silicon photovoltaic cells with clusters of nickel atoms

    М. К. Бахадырханов, S. A. Valiev, Н. Ф. Зикриллаев +3

    ArticleSilicon Nanostructures and PhotoluminescenceApplied Solar Energy201635 citations
    ABI

  2. Ferromagnetic states of p-type silicon doped with Mn

    Ziyodbek A. Yunusov, Sh. U. Yuldashev, Kh. T. Igamberdiev +5

    ArticleQuantum and electron transport phenomenaJournal of the Korean Physical Society201411 citations
    ABI

  3. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleSemiconductor materials and interfacesSemiconductors20218 citations
    ABI

  4. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    ArticleSemiconductor materials and interfacesSemiconductors20228 citations
    ABI

  5. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20238 citations
    ABI

  6. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 citations
    ABI

  7. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20136 citations
    ABI

  8. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 citations
    ABI

  9. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics20126 citations
    ABI

  10. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    ArticleMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 citations
    ABI

  11. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 citations
    ABI

  12. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 citations
    ABI

  13. Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleOptical and Acousto-Optic TechnologiesApplied Solar Energy20125 citations
    ABI

  14. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 citations
    ABI

  15. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    ArticleSemiconductor materials and interfacesSemiconductors19994 citations
    ABI

  16. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    ArticleSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 citations
    ABI

  17. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 citations
    ABI

  18. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 citations
    ABI

  19. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20232 citations
    ABI

  20. Spectral range of current self-oscillation in manganese-doped silicon

    M. K. Bakhadirkhanov, Н. Ф. Зикриллаев, K. S. Ayupov +3

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics20062 citations
    ABI

  21. An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, Sh. N. Ibodullaev, Н. Ф. Зикриллаев +1

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20212 citations
    ABI

  22. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    ArticleChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 citations
    ABI

  23. Negative magnetoresistance in silicon doped with manganese

    Н. Ф. Зикриллаев, Х. М. Илиев, Г. Х. Мавлонов +2

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20231 citations
    ABI

  24. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 citations
    ABI

  25. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 citations
    ABI