Article

SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

Н. Ф. ЗикриллаевTashkent State Technical University, 100095, Tashkent, UzbekistanS. KoveshnikovTashkent State Technical University, 100095, Tashkent, UzbekistanС. Б. ИсамовTashkent State Technical University, 100095, Tashkent, UzbekistanB. A. AbdurahmonovTashkent State Technical University, 100095, Tashkent, UzbekistanHabibjon KushievTashkent State Technical University, 100095, Tashkent, Uzbekistan

Semiconductorsjournal2022en

ABI

Abstract

A graded-gap structure of the GexSi1 – x type is obtained by diffusion doping silicon with germanium. Elemental analysis of the surface of the samples showed that the concentration of silicon (in atomic percent) was 64.5%, germanium 26.9%, oxygen 5.9%, and other elements 2.7%. On the spectral dependence of the photoconductivity, a noticeable increase in the photocurrent begins at hν = 0.75–0.8 eV, which approximately corresponds to the band gap of the Ge0.27Si0.73 material. The development of diffusion technology for obtaining graded-gap GexSi1 – x structures will allow the development of photodetectors with an extended region of spectral sensitivity.

Topics

Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence Quantum Dots Synthesis And Properties

Identifiers

DOI: 10.1134/s1063782622020191

Citations and references

Cited by 8 17 references

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