Works cited by this work

17 works

Work: SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

1. Transport properties of silicon doped with manganese via low-temperature diffusion

   М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

   ArticleSilicon and Solar Cell TechnologiesInorganic Materials201124 citations

   ABIABI:AkademIndex/openalex/2026.other.229086

2. Properties of self-organized SiGe nanostructures formed by ion implantation

   Yu. N. Parkhomenko, A. I. Belogorokhov, Н. Н. Герасименко +2

   Article20045 citations

   ABIABI:AkademIndex/openalex/2026.other.251134

3. Silicon-germanium—a promise into the future?

   H. G. Grimmeiss

   Article19993 citations

   ABIABI:AkademIndex/openalex/2026.other.251131

4. The Diffusion Coefficient of Germanium in Silicon

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   ABIABI:AkademIndex/openalex/2026.other.251139

5. Oxygen-containing radiation defects in Si1−xGex

   Yu.V. Pomozov, Mikhail G. Sosnin, Lyudmila I. Khirunenko +4

   Article20002 citations

   ABIABI:AkademIndex/openalex/2026.other.251136

6. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

   A.S. Saidov, A. Kutlimratov, Б. Сапаев +1

   ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20012 citations

   ABIABI:AkademIndex/openalex/2026.other.251138

7. Effect of the presence of a sufficiently high phosphorus concentration on the concentration distribution of gallium in silicon

   M. K. Bakhadirkhanov, Zikrillaev N.F., С. Б. Исамов +2

   ArticleAdvanced Materials and Semiconductor TechnologiesФизика и техника полупроводников20222 citations

   ABIABI:AkademIndex/openalex/2026.other.251145

8. Low-temperature diffusion of lithium in silicon-germanium solid solutions

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov

   ArticleSemiconductor materials and interfacesPhysics of the Solid State20011 citations

   ABIABI:AkademIndex/openalex/2026.other.251132

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