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G. A. Kushiev

6 works

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20238 citations
    ABI

  2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 citations
    ABI

  3. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 citations
    ABI

  4. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 citations
    ABI

  5. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20250 citations
    ABI

  6. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

    Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 citations
    ABI