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Н. Ф. Зикриллаев

42 works

Tashkent State Technical University, 100095 Tashkent, Uzbekistan

  1. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 citations
    ABI

  2. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

    М. К. Бахадырханов, Kh. Azimkhuzhaev, Н. Ф. Зикриллаев +2

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  3. Comparative study of photocells based on silicon doped with nickel by various methods

    К. А. Исмайлов, Н. Ф. Зикриллаев, S. Koveshnikov +1

    ArticleSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 citations
    ABI

  4. The anomalous Hall effect in silicon with nanoclusters of manganese atoms

    Н. Ф. Зикриллаев, K. S. Ayupov, Г. Х. Мавлонов +1

    ArticleMagnetic Field Sensors Techniques20100 citations
    ABI

  5. Magnetic properties of silicon with nanoclusters of manganese atoms

    K. S. Ayupov, М. К. Бахадырханов, G. H. Mavlonov +3

    ArticleMaterial Science and Thermodynamics20100 citations
    ABI

  6. Counters of photons with λ=1.5 - 8 μm on the basis of silicon crystal contained multi charge nano clusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    ArticleCrystallography and Radiation PhenomenaUzbekiston Fizika Zhurnali20110 citations
    ABI

  7. The multicharged cluster electronic structure of manganese atoms in silicon

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleElectron and X-Ray Spectroscopy Techniques20110 citations
    ABI

  8. The binary clusters of impurity atoms in the silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, O.Eh. Satarov +3

    ArticleSemiconductor materials and interfaces20110 citations
    ABI

  9. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20220 citations
    ABI

  10. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh.S. Turekeev Kh. S. +2

    ArticleSemiconductor materials and interfacesФизика твердого тела20220 citations
    ABI

  11. Properties of “Higher Manganese Silicide-Silicon” Heterostructure

    Kobiljon K. ugli Kurbonaliev, Н. Ф. Зикриллаев, A. Zh. Khusanov

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20230 citations
    ABI

  12. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4

    ArticleSilicon and Solar Cell TechnologiesRussian Microelectronics20240 citations
    ABI

  13. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    ArticleSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citations
    ABI

  14. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 citations
    ABI

  15. Erratum to: Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +1

    OtherSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  16. Ferromagnetic Properties of Silicon Doped Manganese Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

    ArticleZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 citations
    ABI

  17. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

    Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 citations
    ABI