Article

Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

Н. Ф. ЗикриллаевTashkent State Technical University, Tashkent, UzbekistanS. KoveshnikovTashkent State Technical University, Tashkent, UzbekistanKh. S. TurekeevTashkent State Technical University, Tashkent, UzbekistanН. НоркуловNational University of Uzbekistan, Tashkent, UzbekistanС. А. ТачилинTashkent State Technical University, Tashkent, Uzbekistan

Physics of the Solid Statejournal2022en

ABI

Abstract

Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface is studied. After diffusion, the silicon samples are examined using the Van der Pauw method and a scanning electron microscopy in order to determine the concentration distribution of impurity atoms of phosphorus and gallium.

Topics

Silicon and Solar Cell Technologies Semiconductor Quantum Structures and Devices Advancements in Semiconductor Devices and Circuit Design

Identifiers

DOI: 10.1134/s1063783422110154

Citations and references

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