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Advancements in Semiconductor Devices and Circuit Design

147 works

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    ArticleSilicon and Solar Cell TechnologiesInorganic Materials201124 citations
    ABI

  2. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +1

    ArticleQuantum and electron transport phenomenaInternational Journal of Modern Physics B202020 citations
    ABI

  3. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    ArticleSemiconductor Quantum Structures and DevicesIndian Journal of Physics202114 citations
    ABI

  4. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 citations
    ABI

  5. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

    Ulugbek Erkaboev, R. G. Rakhimov

    ArticleSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy202311 citations
    ABI

  6. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    ArticleSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 citations
    ABI

  7. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleSemiconductor materials and interfacesEast European Journal of Physics202410 citations
    ABI

  8. Galvano- and thermo-magnetic effects at low and high temperatures within non-Markovian quantum Langevin approach

    I. B. Abdurakhmanov, G. G. Adamian, N. V. Antonenko +1

    ArticleQuantum and electron transport phenomenaPhysica A Statistical Mechanics and its Applications201810 citations
    ABI

  9. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

    М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2

    ArticleIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20228 citations
    ABI

  10. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19847 citations
    ABI

  11. Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures

    Rustam Yavkachovich Rasulov, N. Z. Mamadalieva, R. R. Sultanov

    ArticleSemiconductor materials and interfacesRussian Physics Journal20207 citations
    ABI

  12. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 citations
    ABI

  13. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  14. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  15. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20127 citations
    ABI

  16. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

    G. Gulyamov, A. B. Davlatov, Kh. N. Juraev

    ArticleOptical properties and cooling technologies in crystalline materialsLow Temperature Physics20227 citations
    ABI

  17. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 citations
    ABI

  18. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    ArticleSemiconductor materials and devicesTechnical Physics Letters20186 citations
    ABI

  19. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 citations
    ABI

  20. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    ArticleSemiconductor materials and devicesMicro and Nanostructures20235 citations
    ABI

  21. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  22. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  23. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 citations
    ABI

  24. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20095 citations
    ABI

  25. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations
    ABI