A Surface Study of Si Doped Simultaneously with Ga and Sb
X.M. IliyevTashkent state technical university, Tashkent, UzbekistanSobir B. IsamovTashkent state technical university, Tashkent, UzbekistanB. O. IsakovTashkent state technical university, Uzbekistan, TashkentU.X. QurbonovaTashkent state technical university, Tashkent, UzbekistanS.A. AbduraxmonovTashkent state technical university, Tashkent, Uzbekistan
ABI
Abstract
The paper is concerned with the study of silicon samples doped with gallium (Ga) and antimony (Sb) atoms. In particular, the elemental analysis, SEM imaging, and Raman spectrometry analysis of the samples are presented. The elemental analysis revealed that the relative concentrations of Ga (0.4) were almost equal to those of Sb (0.39) and both were formed on the surface of Si. The SEM imaging showed that GaSb microsized islands (diameter of 1 to 15 microns) and a density of ~106 cm-2 were being formed on the surface of Si in the course of the process of diffusion doping. Raman spectral analysis showed that a semiconductor with GaSb molecules self-assemble on Si surface.
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