M. M. Khalilloev

18 works

Urgench State University, Urgench, Uzbekistan

1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   PreprintAdvancements in Semiconductor Devices and Circuit Design20216 citations

   ABIABI:AkademIndex/openalex/2021.preprint.000003

2. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 citations

   ABIABI:AkademIndex/openalex/2021.article.000827

3. Optimization of vertically stacked nanosheet FET immune to self-heating

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   ArticleSemiconductor materials and devicesMicro and Nanostructures20235 citations

   ABIABI:AkademIndex/openalex/2023.article.001165

4. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations

   ABIABI:AkademIndex/openalex/2017.article.000161

5. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 citations

   ABIABI:AkademIndex/openalex/2019.article.000603

6. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   ArticleSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 citations

   ABIABI:AkademIndex/openalex/2026.other.511885

7. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

   A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

   ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 citations

   ABIABI:AkademIndex/openalex/2026.other.541483

8. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   ArticleSemiconductor materials and devicesApplied Sciences20202 citations

   ABIABI:AkademIndex/openalex/2026.other.541488

9. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   ArticleSemiconductor materials and devices20241 citations

   ABIABI:AkademIndex/openalex/2024.article.001950

10. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    ArticleAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 citations

    ABIABI:AkademIndex/openalex/2025.article.001842

11. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    ArticleAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 citations

    ABIABI:AkademIndex/openalex/2021.article.004230

12. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    ArticleAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 citations

    ABIABI:AkademIndex/openalex/2024.article.002170

13. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    ArticleSemiconductor materials and devicesJournal of Computational Electronics20250 citations

    ABIABI:AkademIndex/openalex/2025.article.007736

14. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    ArticleSemiconductor materials and devicesEast European Journal of Physics20250 citations

    ABIABI:AkademIndex/openalex/2025.article.009018

15. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    ArticleSemiconductor materials and devicesEast European Journal of Physics20250 citations

    ABIABI:AkademIndex/openalex/2025.article.009026

16. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

    A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

    PreprintSemiconductor Quantum Structures and DevicesResearch Square20250 citations

    ABIABI:AkademIndex/openalex/2025.preprint.000275

17. First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations

    M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2

    Article2D Materials and ApplicationsEast European Journal of Physics20260 citations

    ABIABI:AkademIndex/openalex/2026.article.011382

18. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 citations

    ABIABI:AkademIndex/openalex/2026.preprint.001199