И. Н. Каримов

5 works

Physics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

   С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

   ArticleElectromagnetic Effects on MaterialsSolid-State Electronics19951 citations

   ABIABI:AkademIndex/openalex/2026.other.379727

2. Tensor electric properties of n-Si monocrystals

   И. Н. Каримов, A.R. Turaev, A.A. Khlbekov +1

   ArticleSemiconductor materials and interfaces19950 citations

   ABIABI:AkademIndex/openalex/1995.article.000176

3. Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature

   G. Gulyamov, И. Н. Каримов, N. Yu. Sharibaev +1

   ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 citations

   ABIABI:AkademIndex/openalex/2010.article.000540

4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   ArticleSemiconductor materials and devices20220 citations

   ABIABI:AkademIndex/openalex/2022.article.011220

5. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   ArticleSemiconductor materials and devicesEast European Journal of Physics20250 citations

   ABIABI:AkademIndex/openalex/2025.article.009018