Article

Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

С. З. ЗайнабидиновPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanP.I. BaranskiyPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanИ. Н. КаримовPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanA.R. TuraevPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, UzbekistanKh.Kh. KarimberdievPhysics Department, Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

Solid-State Electronicsjournal1995en

ABI

Abstract

No abstract available.

Topics

Electromagnetic Effects on Materials Semiconductor materials and interfaces Thermography and Photoacoustic Techniques

Identifiers

DOI: 10.1016/0038-1101(94)00098-z

Citations and references

Cited by 10 references

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