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A.E. Abdikarimov

13 works

Urgench State University, Urgench, 220100, Uzbekistan

  1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    ArticleSemiconductor materials and devicesTechnical Physics Letters20186 citations
    ABI

  2. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations
    ABI

  3. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    ArticleAdvancements in Semiconductor Devices and Circuit Design20144 citations
    ABI

  4. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    ArticleSilicon and Solar Cell Technologies20222 citations
    ABI

  5. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 citations
    ABI

  6. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 citations
    ABI

  7. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Articlesolar cell performance optimization20231 citations
    ABI

  8. Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

    А. Yusupov, A. É. Atamuratov, A.E. Abdikarimov +5

    ArticleAdvanced Memory and Neural Computing20220 citations
    ABI

  9. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    ArticleSemiconductor materials and devices20220 citations
    ABI

  10. Electric conductivity of cotton and its dependence on fiber quality

    A.E. Abdikarimov, Khurshid Bozorov, О. О. Маматкаримов +1

    ArticleTextile materials and evaluationsAIP conference proceedings20250 citations
    ABI

  11. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    ArticleSemiconductor materials and devicesEast European Journal of Physics20250 citations
    ABI

  12. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    ArticleSemiconductor materials and interfacesResults in Physics20260 citations
    ABI

  13. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 citations
    ABI