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Kh. N. Juraev

27 works

Physical-Technical Institute, Uzbek Academy of Sciences, Chingiz Aytmatov Street, 2 “B”, Tashkent 100084, Uzbekistan

  1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    ArticleSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 citations
    ABI

  2. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    ArticleSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 citations
    ABI

  3. Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field

    B. T. Abdulazizov, G. Gulyamov, P. J. Baymatov +3

    ArticleQuantum and electron transport phenomenaSPIN20228 citations
    ABI

  4. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

    G. Gulyamov, A. B. Davlatov, Kh. N. Juraev

    ArticleOptical properties and cooling technologies in crystalline materialsLow Temperature Physics20227 citations
    ABI

  5. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 citations
    ABI

  6. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 citations
    ABI

  7. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    ArticleSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 citations
    ABI

  8. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    ArticleTransition Metal Oxide NanomaterialsApplied Solar Energy20164 citations
    ABI

  9. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    ArticleSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 citations
    ABI

  10. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    ArticleSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 citations
    ABI

  11. Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

    Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials Science20241 citations
    ABI

  12. Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

    P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov +2

    ArticleQuantum and electron transport phenomenaJournal of Computational Electronics20241 citations
    ABI

  13. Effects of Band Nonparabolicity on the Resonance Peaks of the Single-Particle Entropy of a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, Mahmudjon Tohirjonov +3

    ArticleQuantum and electron transport phenomenaInternational Journal of Theoretical Physics20241 citations
    ABI

  14. Rapid 3D Defect Mapping in SiC Betavoltaics via Positron Annihilation Tomograph

    Б.Г. Атабаев, V. I. Chepurnov, N.Yu. Arutyunov +3

    ArticleAdvanced Energy Technologies and Civil Engineering Innovationsphysica status solidi (RRL) - Rapid Research Letters20251 citations
    ABI

  15. Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, A. A. Saydaliev +2

    ArticleQuantum and electron transport phenomenaActa Physica Polonica A20251 citations
    ABI

  16. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    ArticleIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering20210 citations
    ABI

  17. Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

    M. U. Khazhiev, R. R. Kabulov, A. G. Gulyamov +2

    ArticleZnO doping and propertiesApplied Solar Energy20210 citations
    ABI

  18. Formation and Properties of ITO Films Produced on Silicon for Applications in Solar Cells

    А. С. Саидов, А. Кутлимратов, R. R. Kabulov +3

    ArticleZnO doping and properties20230 citations
    ABI

  19. Theoretical study of the threshing process of corn cob under the influence of the rasp bars

    G G Fozilov, A Akhmedov, Sh. U. Yuldashev +2

    ArticleAgricultural Engineering and MechanizationIOP Conference Series Earth and Environmental Science20240 citations
    ABI

  20. ITO Films Deposited on Silicon by CVD Method

    R. R. Kabulov, А. Кутлимратов, А. С. Саидов +2

    ArticleZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 citations
    ABI

  21. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    ArticleSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy20250 citations
    ABI

  22. Internal Energy and Heat Capacity of a Two-Dimensional Electron Gas in a Half-Filled Landau Subband

    B. T. Abdulazizov, P. J. Baymatov, O. M. Yunusov +2

    ArticleQuantum and electron transport phenomenaInternational Journal of Theoretical Physics20250 citations
    ABI

  23. Local overheating of a photovoltaic module junction box: analysis and recommendations

    Farkhodjon Turaev, I. A. Yuldoshev, Kh. N. Juraev +3

    ArticleSilicon and Solar Cell TechnologiesClean Energy20250 citations
    ABI

  24. Morphology and Electrical Properties of ITO Films Obtained on Silicon Substrates by CVD Method

    А. С. Саидов, Sh.N. Usmonov, M. U. Hajiev +9

    ArticleZnO doping and propertiesEast European Journal of Physics20250 citations
    ABI

  25. Development and investigation of the electrophysical and spectrometric characteristics of a <i>p</i> -Si/ <i>n</i> -InP heterostructure radiation detector

    А. С. Саидов, S. A. Radzhapov, Shukrullo Usmonov +3

    ArticleRadiation Effects in ElectronicsOxford Open Materials Science20260 citations
    ABI