Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
Iikham G. AtabaevPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Tojiddin M. SalievPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;É. N. BakhranovPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Dilmurad SAIDOVPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;Kh. N. JuraevPhysical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan;C. C. TinDepartment of Physics, Auburn University, Auburn, USA;Víctor AdedejiDepartment of Physics, Auburn University, Auburn, USA;Б.Г. АтабаевArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanNilufar G. SaidkhanovaArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Abstract
Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.