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Works cited by this work

10 works

Work: Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

  1. Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

    I. G. Atabaev, C. C. Tin, Б.Г. Атабаев +12

    Article20088 citations
    ABI

  2. Investigation of boron diffusion in 6H-SiC

    Yu Gao, Stanislav I. Soloviev, T. S. Sudarshan

    Article20035 citations
    ABI

  3. Diffusion of boron in silicon carbide

    K. Rüschenschmidt, H. Bracht, Michael Laube +2

    Article20013 citations
    ABI

  4. Vacancy defects in silicon carbide

    O. Girka, E. N. Mokhov

    Article19953 citations
    ABI

  5. Untitled

    Other3 citations
    ABI

  6. Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism

    H. Bracht, N. A. Stolwijk, Michael Laube +1

    Article20002 citations
    ABI

  7. Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

    Kazuhiro Mochizuki, Haruka Shimizu, Natsuki Yokoyama

    Article20092 citations
    ABI

  8. Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

    P. G. Baranov, I. V. Il’in, E. N. Mokhov

    Article19982 citations
    ABI

  9. Untitled

    Other1 citations
    ABI

  10. Untitled

    Other1 citations
    ABI