Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide
Kazuhiro MochizukiCentral Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, JapanHaruka ShimizuCentral Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, JapanNatsuki YokoyamaCentral Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
2009en
ABI
Abstract
Reported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a "dual-sublattice" modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a "semi-atomistic" simulation, in which silicon and carbon interstitials are regarded as the same interstitials (I) and silicon and carbon vacancies are regarded as the same vacancies (V). Diffusion of implanted boron ions is calculated from the initial concentration profiles of I and V by Monte-Carlo simulation assuming tentatively a probability of 50% that implanted boron ions will occupy carbon sublattices.
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